arXiv · cond-mat/9706157
Fractional Quantum Hall Effect Measurements at Zero g-Factor
Abstract
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the g-factor changes sign when it again increases. The behavior is similar to that seen at v=1 and shows that excitations from the 1/3 ground state can be spin-like in character. At small Zeeman energy, the excitation appears to consist of 3 spins and may be interpreted as a small composite skyrmion.
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D. R. Leadley, R. J. Nicholas, D. K. Maude, A. N. Utjuzh, J. C. Portal, J. J. Harris, C. T. Foxon. 1997-06-16. Fractional Quantum Hall Effect Measurements at Zero g-Factor. https://doi.org/10.1103/physrevlett.79.4246
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