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The metal-insulator transition in Si:X: Anomalous response to a magnetic field

M. P. Sarachik·D. Simonian·S. V. Kravchenko·S. Bogdanovich·V. Dobrosavljevic·G. Kotliar
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Abstract

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.

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M. P. Sarachik, D. Simonian, S. V. Kravchenko, S. Bogdanovich, V. Dobrosavljevic, G. Kotliar. 1997-06-30. The metal-insulator transition in Si:X: Anomalous response to a magnetic field. https://doi.org/10.1103/physrevb.58.6692

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