On the Origin of the Metal-Insulator Transition in 2D

V. M. Pudalov

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On the Origin of the Metal-Insulator Transition in 2D

V. M. Pudalov

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Abstract

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data.

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V. M. Pudalov. 1997-07-04. On the Origin of the Metal-Insulator Transition in 2D. https://arxiv.org/abs/cond-mat/9707053

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