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Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''

K. Ismail·J. O. Chu·Dragana Popovic·A. B. Fowler·S. Washburn
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Abstract

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We present evidence for a 2D MIT in a structure where the disorderis about two orders of magnitude weaker than in Si MOSFETs. The MIT occurs in the same range of $n_s$ Providing very strong evidence that the 2D MIT in Si-based devices is caused by electron-electron interactions.

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K. Ismail, J. O. Chu, Dragana Popovic, A. B. Fowler, S. Washburn. 1997-07-06. Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''. https://arxiv.org/abs/cond-mat/9707061

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