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Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

A. Wacker·M. Moscoso·M. Kindelan·L. L. Bonilla
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Abstract

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.

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A. Wacker, M. Moscoso, M. Kindelan, L. L. Bonilla. 1997-07-23. Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices. https://doi.org/10.1103/physrevb.55.2466

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