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Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

S. V. Kravchenko·D. Simonian·M. P. Sarachik·A. D. Kent·V. M. Pudalov
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Abstract

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.

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S. V. Kravchenko, D. Simonian, M. P. Sarachik, A. D. Kent, V. M. Pudalov. 1997-09-25. Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs. https://doi.org/10.1103/physrevb.58.3553

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