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Energetics of Quantum Antidot States in Quantum Hall Regime

I. J. Maasilta·V. J. Goldman
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Abstract

We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling line widths as function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot bound states, self consistent edge electric field, and edge excitation drift velocity.

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I. J. Maasilta, V. J. Goldman. 1997-10-20. Energetics of Quantum Antidot States in Quantum Hall Regime. https://doi.org/10.1103/physrevb.57.r4273

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