Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

M. A. Skvortsov

doi:10.1134/1.567636

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arXiv · cond-mat/9712135

Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

M. A. Skvortsov

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Abstract

Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.

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M. A. Skvortsov. 1998-03-02. Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum. https://doi.org/10.1134/1.567636

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