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H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition

D. Simonian·S. V. Kravchenko·M. P. Sarachik·V. M. Pudalov
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Abstract

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $Δσ(H_{||},T)\equivσ(H_{||},T)-σ(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions.

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D. Simonian, S. V. Kravchenko, M. P. Sarachik, V. M. Pudalov. 1998-01-12. H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition. https://arxiv.org/abs/cond-mat/9712223

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