Tunneling in very small GaAs MESFET

W. Poirier; D. Mailly; M. Sanquer

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arXiv · cond-mat/9712270

Tunneling in very small GaAs MESFET

W. Poirier·D. Mailly·M. Sanquer

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Abstract

We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.

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W. Poirier, D. Mailly, M. Sanquer. 1997-12-22. Tunneling in very small GaAs MESFET. https://arxiv.org/abs/cond-mat/9712270

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