Quantum Mott transition in a silicon quantum dot

S. V. Vyshenski; U. Zeitler; R. J. Haug

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arXiv · cond-mat/9802227

Quantum Mott transition in a silicon quantum dot

S. V. Vyshenski·U. Zeitler·R. J. Haug

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Abstract

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

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S. V. Vyshenski, U. Zeitler, R. J. Haug. 1998-02-21. Quantum Mott transition in a silicon quantum dot. https://arxiv.org/abs/cond-mat/9802227

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