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Resistivity due to low-symmetrical defects in metals

J. P. Dekker·A. Lodder·J. van Ek
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Abstract

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean-free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects, such as an impurity-vacancy pair, is calculated for the FCC host metals Al and Ag and the BCC transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process.

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J. P. Dekker, A. Lodder, J. van Ek. 1998-02-26. Resistivity due to low-symmetrical defects in metals. https://doi.org/10.1103/physrevb.57.12719

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