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STM induced hydrogen desorption via a hole resonance

K. Stokbro·C. Thirstrup·M. Sakurai·U. Quaade·Ben Yu-Kuang Hu·F. Perez-Murano·F. Grey
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Abstract

We report STM-induced desorption of H from Si(100)-H(2$\times1$) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5$σ$ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.

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K. Stokbro, C. Thirstrup, M. Sakurai, U. Quaade, Ben Yu-Kuang Hu, F. Perez-Murano, F. Grey. 1998-02-27. STM induced hydrogen desorption via a hole resonance. https://doi.org/10.1103/physrevlett.80.2618

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