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Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

K. Maiti·Priya Mahadevan·D. D. Sarma
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Abstract

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.

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K. Maiti, Priya Mahadevan, D. D. Sarma. 1998-03-11. Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions. https://doi.org/10.1103/physrevlett.80.2885

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