Nonequilibrium spin distribution in single-electron transistor

Alexander N. Korotkov; V. I. Safarov

doi:10.1103/physrevb.59.89

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arXiv · cond-mat/9804292

Nonequilibrium spin distribution in single-electron transistor

Alexander N. Korotkov·V. I. Safarov

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Abstract

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio $δ$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip $δ$ can become negative.

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Alexander N. Korotkov, V. I. Safarov. 1998-04-27. Nonequilibrium spin distribution in single-electron transistor. https://doi.org/10.1103/physrevb.59.89

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