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Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

Y. Hanein·D. Shahar·J. Yoon·C. C. Li·D. C. Tsui·Hadas Shtrikman
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Abstract

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.

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Y. Hanein, D. Shahar, J. Yoon, C. C. Li, D. C. Tsui, Hadas Shtrikman. 1998-07-17. Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems. https://doi.org/10.1103/physrevb.58.r7520

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