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Paramagnetic structure for the soliton of the $30^\circ$ partial dislocation in silicon

Gabor Csanyi·Sohrab Ismail-Beigi·T. A. Arias
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Abstract

Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

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Gabor Csanyi, Sohrab Ismail-Beigi, T. A. Arias. 1998-05-25. Paramagnetic structure for the soliton of the $30^\circ$ partial dislocation in silicon. https://doi.org/10.1103/physrevlett.80.3984

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