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Thin-Film Trilayer Manganate Junctions

Jonathan Z. Sun
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Abstract

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

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Jonathan Z. Sun. 1998-07-08. Thin-Film Trilayer Manganate Junctions. https://doi.org/10.1098/rsta.1998.0242

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