Negative differential resistance due to single-electron switching

C. P. Heij; D. C. Dixon; P. Hadley; J. E. Mooij

doi:10.1063/1.123449

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Negative differential resistance due to single-electron switching

C. P. Heij·D. C. Dixon·P. Hadley·J. E. Mooij

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Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

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C. P. Heij, D. C. Dixon, P. Hadley, J. E. Mooij. 1998-09-21. Negative differential resistance due to single-electron switching. https://doi.org/10.1063/1.123449

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