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Probing the plateau-insulator quantum phase transition in the quantum Hall regime

R. T. F. van Schaijk·A. de Visser·S. Olsthoorn·H. P. Wei·A. M. M. Pruisken
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Abstract

We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance ρ_{xx} follow an exponential law and we extract a critical exponent κ= .55 \pm .05 which is slightly different from the established value κ= .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance σ_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.

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R. T. F. van Schaijk, A. de Visser, S. Olsthoorn, H. P. Wei, A. M. M. Pruisken. 1998-12-02. Probing the plateau-insulator quantum phase transition in the quantum Hall regime. https://doi.org/10.1103/physrevlett.84.1567

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