arXiv · cond-mat/9812048
The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction
Abstract
We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance $ΔR/R$ can be more than 80% at low temperatures.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
X. R. Wang, S. C. Ma, X. C. Xie. 1998-12-03. The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction. https://doi.org/10.1209/epl%2Fi1997-00534-y
Cite the original work for its findings. Save a collection to share your selection of sources.