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Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

Arne Brataas·Yu. V. Nazarov·J. Inoue·G. E. W. Bauer
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Abstract

We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time- dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non- equilibrium spin accumulation.

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Arne Brataas, Yu. V. Nazarov, J. Inoue, G. E. W. Bauer. 1998-12-14. Non-equilibrium spin accumulation in ferromagnetic single-electron transistors. https://doi.org/10.1007/s100510050784

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