Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz

Mark Lee; J. G. Massey; V. L. Nguyen; B. I. Shklovskii

doi:10.1103/physrevb.60.1582

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Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz

Mark Lee·J. G. Massey·V. L. Nguyen·B. I. Shklovskii

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Abstract

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies, a DOS measurement distinguishes between insulating and metallic samples with densities 10 to 15 % on either side of the MIT. However, at higher energies the DOS of both insulators and metals show a common behavior, increasing roughly as the square-root of energy. The observed characteristics of the DOS can be understood using a classical treatment of Coulomb interactions combined with a phenomenological scaling ansatz to describe the length-scale dependence of the dielectric constant as the MIT is approached from the insulating side.

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Mark Lee, J. G. Massey, V. L. Nguyen, B. I. Shklovskii. 2014-11-18. Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz. https://doi.org/10.1103/physrevb.60.1582

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