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Charge sensitivity of radio frequency single-electron transistor (RF-SET)

Alexander N. Korotkov·Mikko A. Paalanen
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Abstract

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature $T$, and at low $T$ it is only 1.4 times less than the sensitivity of conventional single-electron transistor.

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Alexander N. Korotkov, Mikko A. Paalanen. 1999-02-15. Charge sensitivity of radio frequency single-electron transistor (RF-SET). https://doi.org/10.1063/1.123258

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