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Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition

K. M. Mertes·D. Simonian·M. P. Sarachik·S. V. Kravchenko·T. M. Klapwijk
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Abstract

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems.

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K. M. Mertes, D. Simonian, M. P. Sarachik, S. V. Kravchenko, T. M. Klapwijk. 1999-06-14. Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition. https://doi.org/10.1103/physrevb.60.r5093

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