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Novel metallic behavior in two dimensions

X. G. Feng·Dragana Popovic·S. Washburn·V. Dobrosavljevic
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Abstract

Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as σ(n_s,T)=σ(n_s,T=0)+A(n_s)T^2 (n_s-carrier density) to a non-zero value as temperature T->0. In 2D, the existence of a metal with dσ/dT>0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D.

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X. G. Feng, Dragana Popovic, S. Washburn, V. Dobrosavljevic. 2000-12-08. Novel metallic behavior in two dimensions. https://doi.org/10.1103/physrevlett.86.2625

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