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Anomalous c-axis charge dynamics in copper oxide materials

Shiping Feng·F. Yuan·W. Q. Yu·P. P. Zhang
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Abstract

Within the t-J model, the c-axis charge dynamics of the copper oxide materials in the underdoped and optimally doped regimes is studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics is mainly governed by the scattering from the in-plane fluctuation. In the optimally doped regime, the c-axis resistivity is a linear in temperatures, and shows the metallic-like behavior for all temperatures, while the c-axis resistivity in the underdoped regime is characterized by a crossover from the high temperature metallic-like behavior to the low temperature semiconducting-like behavior, which are consistent with experiments and numerical simulations.

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Shiping Feng, F. Yuan, W. Q. Yu, P. P. Zhang. 2003-11-06. Anomalous c-axis charge dynamics in copper oxide materials. https://doi.org/10.1103/physrevb.60.7565

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