Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

P. T. Coleridge; P. Zawadzki; A. S. Sachrajda; R. L. Williams; Y. Feng

doi:10.1016/s1386-9477(99)00142-3

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Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

P. T. Coleridge·P. Zawadzki·A. S. Sachrajda·R. L. Williams·Y. Feng

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Abstract

Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $ν$=3/2 insulating state is demonstrated.

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P. T. Coleridge, P. Zawadzki, A. S. Sachrajda, R. L. Williams, Y. Feng. 1999-06-17. Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System. https://doi.org/10.1016/s1386-9477(99)00142-3

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