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Oscillatory screening of the dc electric field in the Si-SiO$_2$ multiple quantum wells probed by second-harmonic generation

V. V. Savkin·A. A. Fedyanin·A. N. Rubtsov·F. A. Pudonin·O. A. Aktsipetrov
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Abstract

DC-electric field, being screened in 3D semiconductors, normally decays monotonically in space. Experimental studies of the DC electric field screening in Si-SiO$_2$ multiple quantum wells by electric field induced optical second-harmonic generation show a non-monotonic, oscillatory-like decay. The model of electrons localized inside quantum wells, with the first subband occupied, allows a description of the phenomenon. Interwell Coulomb interaction, a finite value of the electron charge and strong effective-mass anisotropy result in a crucial difference from 3D Fermi liquid.

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V. V. Savkin, A. A. Fedyanin, A. N. Rubtsov, F. A. Pudonin, O. A. Aktsipetrov. 1999-08-17. Oscillatory screening of the dc electric field in the Si-SiO$_2$ multiple quantum wells probed by second-harmonic generation. https://arxiv.org/abs/cond-mat/9908238

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