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Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films

W. Westerburg·F. Martin·G. Jakob
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Abstract

We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10^{-10} m^3/As, corresponding to a nominal charge carrier density of four electrons per formula unit. At low temperature only a small negative magnetoresistance is observed which vanishes at higher temperatures. The temperature coefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable range hopping like transport occurs.

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W. Westerburg, F. Martin, G. Jakob. 1999-10-29. Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films. https://doi.org/10.1063/1.373241

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