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Excitonic lasing in semiconductor quantum wires

L. Sirigu·D. Y. Oberli·L. Degiorgi·A. Rudra·E. Kapon
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Abstract

Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.

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L. Sirigu, D. Y. Oberli, L. Degiorgi, A. Rudra, E. Kapon. 1999-12-01. Excitonic lasing in semiconductor quantum wires. https://doi.org/10.1103/physrevb.61.r10575

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