Magnetic ordering in GaAlAs:Mn double well structure

M. A. Boselli; I. C. da Cunha Lima; A. Ghazali

doi:10.1063/1.372731

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Magnetic ordering in GaAlAs:Mn double well structure

M. A. Boselli·I. C. da Cunha Lima·A. Ghazali

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Abstract

The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.

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M. A. Boselli, I. C. da Cunha Lima, A. Ghazali. 1999-12-01. Magnetic ordering in GaAlAs:Mn double well structure. https://doi.org/10.1063/1.372731

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