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Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: towards the implementation of R-pump

A. B. Zorin·S. V. Lotkhov·H. Zangerle·J. Niemeyer
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Abstract

We report on the investigation of Al single electron structures equipped with miniature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. From the measurement of the Coulomb blockade in single-junction structures we evaluated the self-capacitance of our resistors per unit length, c = 62 aF/um. We demonstrate that the cotunneling current in the transistor samples in the Coulomb blockade regime obeys the power law, $I \propto V^{3+(R/R_k)}$, predicted by Odintsov, Bubanja and Schön for a transistor having pure ohmic-resistance leads. The concept of the three-junction single electron pump with on-chip resistors (R-pump) is developed. We demonstrate that the implementation of the R-pump with a relative accuracy of the electron transfer of 10^{-8} is quite feasible with the technology available.

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A. B. Zorin, S. V. Lotkhov, H. Zangerle, J. Niemeyer. 1999-12-02. Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: towards the implementation of R-pump. https://doi.org/10.1063/1.1286328

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