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A simple model for the metal-insulator transition in a two-dimensional electron gas

J. C. Flores·V. Bellani·F. Dominguez-Adame
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Abstract

We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a threshold carrier density above which this effect is relevant. The predicted value agrees remarkably well with the onset for the insulator to quasi-metallic transition recently observed in several experiments in SiO2-Si and AlGaAs-GaAs heterojunctions.

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J. C. Flores, V. Bellani, F. Dominguez-Adame. 1999-12-27. A simple model for the metal-insulator transition in a two-dimensional electron gas. https://arxiv.org/abs/cond-mat/9912457

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