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The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

Eckhard Pehlke·Nikolaj Moll·Matthias Scheffler
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Abstract

The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies.

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Eckhard Pehlke, Nikolaj Moll, Matthias Scheffler. 1996-07-19. The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. https://arxiv.org/abs/mtrl-th/9607012

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