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Atom lithography using MRI-type feature placement

J. H. Thywissen·M. Prentiss
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Abstract

We demonstrate the use of frequency-encoded light masks in neutral atom lithography. We demonstrate that multiple features can be patterned across a monotonic potential gradient. Features as narrow as 0.9 microns are fabricated on silicon substrates with a metastable argon beam. Internal state manipulation with such a mask enables continuously adjustable feature positions and feature densities not limited by the optical wavelength, unlike previous light masks.

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J. H. Thywissen, M. Prentiss. 2002-09-23. Atom lithography using MRI-type feature placement. https://doi.org/10.1088/1367-2630%2F7%2F1%2F047

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