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Realizing a stable magnetic double-well potential on an atom chip

Jerome Esteve·Thorsten Schumm·Jean-Baptiste Trebbia·Isabelle Bouchoule·Alain Aspect·Christopher Westbrook
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Abstract

We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.

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Jerome Esteve, Thorsten Schumm, Jean-Baptiste Trebbia, Isabelle Bouchoule, Alain Aspect, Christopher Westbrook. 2005-03-14. Realizing a stable magnetic double-well potential on an atom chip. https://doi.org/10.1140/epjd%2Fe2005-00190-9

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