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Enhanced stimulated Raman scattering in slow-light photonic crystal waveguides

J. F. McMillan·X. Yang·N. C. Panoiu·R. M. Osgood·C. W. Wong
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Abstract

We investigate for the first time the enhancement of the stimulated Raman scattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the down-shifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 10^4 (66,000) enhancement with respect to SOI channel waveguides. Effects of two photon absorption, intrinsic scattering, and disorder with respect to slow-light Raman generation towards optically-pumped silicon amplifiers and lasers are also discussed.

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J. F. McMillan, X. Yang, N. C. Panoiu, R. M. Osgood, C. W. Wong. 2005-12-14. Enhanced stimulated Raman scattering in slow-light photonic crystal waveguides. https://doi.org/10.1364/ol.31.001235

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