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Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser

Mathieu Jacquemet·Manuela Domenech·Julie Dion·Martin Strassner·Gaelle Lucas-Leclin·Patrick Georges·Isabelle Sagnes·Arnaud Garnache
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Abstract

This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.

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Mathieu Jacquemet, Manuela Domenech, Julie Dion, Martin Strassner, Gaelle Lucas-Leclin, Patrick Georges, Isabelle Sagnes, Arnaud Garnache. 2006-06-26. Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser. https://doi.org/10.1117/12.662931

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