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Heating-Assisted Atom Transfer in the Scanning Tunneling Microscope

M. Grigorescu
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Abstract

The effects of a voltage pulse on the localization probability for a Xe atom prepared in a pure state localized on the STM surface at 0 temperature is investigated by numerically integrating the time-dependent Schroedinger equation. In these calculations the environmental interactions are neglected, and voltage pulses of 20 and 7 ns with symmetric triangular and trapezoidal shapes are considered. The atom dynamics at an environmental temperature of 4 K is studied in the frame of a stochastic, non-linear Liouville equation for the density operator. It is shown that the irreversible transfer from surface to tip may be explained by thermal decoherence rather than by the driving force acting during the application of the voltage pulse.

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M. Grigorescu. 1997-09-19. Heating-Assisted Atom Transfer in the Scanning Tunneling Microscope. https://doi.org/10.1139/cjp-76-12-911

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