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Approach to the semiconductor cavity QED in high-Q regimes with q-deformed boson

Yu-Xi Liu·C. P Sun·S. X. Yu·D. L. Zhou
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Abstract

The high density Frenkel exciton which interacts with a single mode microcavity field is dealed with in the framework of the q-deformed boson. It is shown that the q-defomation of bosonic commutation relations is satisfied naturally by the exciton operators when the low density limit is deviated. An analytical expression of the physical spectrum for the exciton is given by using of the dressed states of the cavity field and the exciton. We also give the numerical study and compare the theoretical results with the experimental results

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Yu-Xi Liu, C. P Sun, S. X. Yu, D. L. Zhou. 2000-01-19. Approach to the semiconductor cavity QED in high-Q regimes with q-deformed boson. https://doi.org/10.1103/physreva.63.023802

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