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A single photoelectron transistor for quantum optical communications

Hideo Kosaka·Deepak S. Rao·Hans D. Robinson·Prabhakar Bandaru·Kikuo Makita·Eli Yablonovitch
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Abstract

A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.

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Hideo Kosaka, Deepak S. Rao, Hans D. Robinson, Prabhakar Bandaru, Kikuo Makita, Eli Yablonovitch. 2002-09-02. A single photoelectron transistor for quantum optical communications. https://doi.org/10.1103/physrevb.67.045104

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