arXiv · quant-ph/0605042
Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector
Abstract
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
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Sara Pellegrini, Ryan E. Warburton, Lionel J. J. Tan, Jo Shien Ng, Andrey B. Krysa, Kristian Groom, John P. R. David, Sergio Cova, Michael J. Robertson, Gerald S. Buller. 2006-05-03. Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector. https://doi.org/10.1109/jqe.2006.871067
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