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Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures

Rutger Vrijen·Eli Yablonovitch·Kang Wang·Hong Wen Jiang·Alex Balandin·Vwani Roychowdhury·Tal Mor·David DiVincenzo
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Abstract

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological basis for quantum information processing. One and two qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g-factor (Si:g=1.995, Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain Silicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

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Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo. 1999-06-11. Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures. https://doi.org/10.1103/physreva.62.012306

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