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Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer

S. N. Molotkov·S. S. Nazin
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Abstract

The scheme for measurement of the state of a single spin (or a few spin system) based on the single-electron turnstile and injection of spin polarized electrons from magnetic metal contacts is proposed. Applications to the recent proposal concerning the spin gates based on a silicon matrix (B.Kane, Nature, {\bf 393}, 133 (1998)) are discussed.

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S. N. Molotkov, S. S. Nazin. 1999-06-28. Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer. https://arxiv.org/abs/quant-ph/9906106

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