arXiv subjects

Ángel Labordet Álvarez

Publications and source records attributed to Ángel Labordet Álvarez.

4 recordsLinked to original sources

arXiv2026

Surface-Dependent Phonon Dynamics in 9-Armchair Graphene Nanoribbon Arrays

Atomically precise graphene nanoribbons (GNRs) have electronic properties tunable through their width and edge structure, making them promising building blocks for nanoscale electronics and optoelectronics. Their integration into devices also requires understanding how the supporting surface and neighbouring ribbons affect their vibrations. Here, we use temperature-dependent Raman spectroscopy to compare five configurations of 9-armchair GNR arrays differing in substrate, alignment and coverage. Transferring the same unaligned film from Au to a Raman-optimised Al$_2$O$_3$-coated support reduces the measured $D$- and $G$-mode redshift rates by about 80\%. This reduction is consistent with a substantial thermoelastic contribution. The fitted strain and anharmonic contributions depend on the assumed thermal expansion and strain transfer. Compared with the low-coverage array, the dense aligned Au array has higher extrapolated reference frequencies ($ω_0$). On first heating, its $G$-mode linewidth decreases and then increases, forming an unusual intermediate-temperature minimum. The $D$-mode linewidth shows a similar, less pronounced variation. These findings establish substrate choice and array arrangement as routes to engineer nanoribbon vibrations, extending control beyond the atomic structure defined during synthesis.

cond-mat.mtrl-sci↗

arXiv2026

Layer-Dependent Interfacial Coupling and Exciton Pinning in WSe2/Graphene Heterostructures

Understanding interfacial interactions in two-dimensional heterostructures is crucial for their implementation in future optoelectronic and quantum technologies. Here, we investigate interactions between WSe2 and graphene by comparing 1-5 layer MOCVD-grown WSe2 on graphene/SiC with exfoliated WSe2 on SiO2/Si using Raman and photoluminescence spectroscopy combined with atomic force microscopy. Growth on graphene induces persistent compressive strain of approximately 0.2% and reduces the interlayer WSe2 distance by 0.11 +/- 0.05 Angstrom. Interfacial disorder is strongest in the WSe2 layer directly contacting graphene, with an effective Urbach energy of approximately 20 meV, decreasing to approximately 16 meV upon addition of a second layer and remaining similar for thicker films. Increasing WSe2 thickness leads to progressive electron transfer from graphene to WSe2, resulting in p-type doping of graphene and n-type doping of WSe2, with the graphene hole density increasing from approximately 0.4 x 10^13 cm^-2 for 1L to 0.8 x 10^13 cm^-2 for 5L. The A- and B-exciton energies of WSe2 remain nearly pinned on graphene, in contrast to their pronounced thickness-dependent shifts on SiO2/Si. We show that this pinning arises primarily from electronic screening and compressive strain, with smaller contributions from charge transfer and modified interlayer coupling. These findings establish graphene as an active interface for controlling excitonic properties in scalable van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Parallel Exploration of the Optoelectronic Properties of (Sb,Bi)(S,Se)(Br,I) Chalcohalides

Chalcohalides are an emerging family of semiconductors with irresistible material properties, shaped by the intricate interplay between their unique structural chemistry and vibrational dynamics. Despite their promise for next-generation solar energy conversion devices, their intrinsic optoelectronic properties remain largely unexplored. Here, we focus on the (Sb,Bi)(S,Se)(Br,I) system, a subset of compounds that share the same quasi-1D crystal structure. Using a two-step physical vapor deposition (PVD) process, we synthesize the eight ternary chalcohalide compounds, demonstrating bandgaps ranging from 1.38 to 2.08 eV with sharp, single-component photoluminescence (PL) peaks. In a parallel exploration of carrier dynamics and intrinsic electron-phonon interactions -- comprehensively studied using power-, temperature-dependent, and time-resolved PL measurements -- we map their direct impact on optoelectronic performance. Supported by first-principles density functional theory (DFT) defect calculations, we establish clear structure-property relations, identifying solid-solutions engineering as an effective means to fine-tune the native phonon structures and further suppress non-radiative recombination. This study provides a blueprint for optimizing chalcohalides as high-efficiency materials across a wide range of optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2025

BaZrS$_\text{3}$ Lights Up: The Interplay of Electrons, Photons, and Phonons in Strongly Luminescent Single Crystals

Chalcogenide perovskites have emerged as a promising class of materials for the next generation of optoelectronic applications, with BaZrS$_\text{3}$ attracting significant attention due to its wide bandgap, earth-abundant composition, and thermal and chemical stability. However, previous studies have consistently reported weak and ambiguous photoluminescence (PL), regardless of synthesis method, raising questions about the intrinsic optoelectronic quality of this compound. In this work, we demonstrate strong, band-to-band-dominated PL at room temperature in high-quality BaZrS$_\text{3}$ single crystals, with a PL quantum yield of $\sim$0.005\%. Despite the narrow, single-component PL emission band, time-resolved PL measurements reveal a carrier lifetime of $1.0\pm0.2$ ns. To understand the origin of the strong PL and short carrier lifetime, we perform multiwavelength excitation and polarization-dependent Raman measurements, supported by first-principles lattice dynamics calculations. We identify all 23 theoretically predicted Raman-active modes and their symmetries, providing a comprehensive reference for future studies. Our results indicate that phonon-assisted carrier decay and nontrivial electron-phonon interactions contribute to the short carrier lifetimes, as evidenced by Raman spectroscopy and DFT calculations. Further studies on compositional variations or partial cation/anion substitutions could mitigate electron-phonon coupling and enhance carrier lifetimes. By establishing a detailed reference for the intrinsic vibrational and optoelectronic properties of BaZrS$_\text{3}$, this work paves the way for further advancements in chalcogenide perovskites for energy and optoelectronic technologies.

cond-mat.mtrl-sci↗