arXiv subjects

Áron Szabó

Publications and source records attributed to Áron Szabó.

7 recordsLinked to original sources

arXiv2024

Topologically modified Einstein equation: a solution with singularities on $\mathbb{S}^3$

Vigneron [Foundations of Physics, 54, 15, (2024)] recently proposed a modification of general relativity in which a non-dynamical term related to the spatial topology is introduced in the Einstein equation. The original motivation for this theory is to allow for the non-relativistic limit to exist in any physical topology. In the present paper, we derive a first inhomogeneous exact vacuum solution of this theory for a spherical topology, assuming staticity and spherical symmetry. The metric represents a black hole and a repulsive singularity at opposite poles of a 3-sphere. The solution is similar to the Schwarzschild metric, but the spacelike infinity is cut, and replaced by a repulsive singularity at finite distance, implying that the spacelike hypersurfaces have finite volume, and the total mass is zero. We discuss how this solution paves the way to massive, non-static solutions of this theory, more directly relevant for cosmology.

gr-qc↗

arXiv2023

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.

cond-mat.mes-hall↗

arXiv2022

Optimal coordinates for Ricci-flat conifolds

We compute the indicial roots of the Lichnerowicz Laplacian on Ricci-flat cones and give a detailed description of the corresponding radially homogeneous tensor fields in its kernel. For a Ricci-flat conifold $(M,g)$ which may have asymptotically conical as well as conically singular ends, we compute at each end a lower bound for the order with which the metric converges to the tangent cone. As a special subcase of our result, we show that any Ricci-flat ALE manifold $(M^n,g)$ is of order $n$ and thereby close a small gap in a paper by Cheeger and Tian.

math.DG↗

arXiv2020

Mean curvature flow in asymptotically flat product spacetimes

We consider the long-time behaviour of the mean curvature flow of spacelike hypersurfaces in the Lorentzian product manifold $M\times\mathbb{R}$, where $M$ is asymptotically flat. If the initial hypersurface $F_0\subset M\times\mathbb{R}$ is uniformly spacelike and asymptotic to $M\times\left\{s\right\}$ for some $s\in\mathbb{R}$ at infinity, we show that a mean curvature flow starting at $F_0$ exists for all times and converges uniformly to $M\times\left\{s\right\}$ as $t\to \infty$.

math.DG↗

arXiv2020

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community.

cond-mat.mes-hall↗

arXiv2019

One-dimensional edge contacts to a monolayer semiconductor

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS$_2$. By combining reactive ion etching, in situ Ar$^+$ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ~30 cm$^2$/Vs) and high on-current density (>50 uA/um at V$_{\rm DS}$ = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS$_2$ channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.

cond-mat.mtrl-sci↗

arXiv2019

Light from van der Waals quantum tunneling devices

The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways - van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructure made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling.

cond-mat.mes-hall↗