arXiv subjects
Publications and source records attributed to É. D. Murray.
We report the observation of photo-induced plasmon-phonon coupled modes in the group IV-VI semiconductor PbTe using Fourier-transform inelastic X-ray scattering at the Linac Coherent Light Source (LCLS). We measure the near-zone-center dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above band gap photoexcitation.
We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by inter-valley electron-phonon scattering. We provide a full description of the phonon and electron relaxation dynamics without adjustable parameters. Simulations of the time-evolution of phonon populations, based on first-principles band structure and electron-phonon and phonon-phonon matrix elements, are compared with data from time-resolved x-ray diffuse scattering experiments, performed at the LCLS x-ray free-electron laser facility, which measures the diffuse scattering intensity following photo-excitation by a 50 fs near-infrared optical pulse. Comparing calculations and measurements show that the intensity of the non-thermal x-ray diffuse scattering signal, that is observed to grow substantially near the L-point of the Brillouin zone over 3-5 ps, is due to phonons generated by scattering of carriers between the $Δ$ and L valleys. Non-thermal phonon populations throughout the Brillouin zone are observed and simulated from first principles without adjustable parameters for times up to 10 ps. With inclusion of phonon decay through 3-phonon processes, the simulations also account for other non-thermal features observed in the x-ray diffuse scattering intensity, which are due to anharmonic phonon-phonon scattering of the phonons initially generated by electron-phonon scattering.
The interactions between electrons and phonons drive a large array of technologically relevant material properties including ferroelectricity, thermoelectricity, and phase-change behaviour. In the case of many group IV-VI, V, and related materials, these interactions are strong and the materials exist near electronic and structural phase transitions. Their close proximity to phase instability produces a fragile balance among the various properties. The prototypical example is PbTe whose incipient ferroelectric behaviour has been associated with large phonon anharmonicity and thermoelectricity. Experimental measurements on PbTe reveal anomalous lattice dynamics, especially in the soft transverse optical phonon branch. This has been interpreted in terms of both giant anharmonicity and local symmetry breaking due to off-centering of the Pb ions. The observed anomalies have prompted renewed theoretical and computational interest, which has in turn revived focus on the extent that electron-phonon interactions drive lattice instabilities in PbTe and related materials. Here, we use Fourier-transform inelastic x-ray scattering (FT-IXS) to show that photo-injection of free carriers stabilizes the paraelectric state. With support from constrained density functional theory (CDFT) calculations, we find that photoexcitation weakens the long-range forces along the cubic direction tied to resonant bonding and incipient ferroelectricity. This demonstrates the importance of electronic states near the band edges in determining the equilibrium structure.