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Željka Antić

Publications and source records attributed to Željka Antić.

2 recordsLinked to original sources

SpectraSensML Software: Mastering Complete Spectral Information for Luminescence Thermometry 2.0

Luminescence thermometry has evolved through decades of research focused on optimising materials and on extracting temperature information from isolated spectral features such as luminescence intensity ratios, bandwidth, line shift and excited-state lifetime. Despite extensive material development, these conventional methods remain fundamentally limited by construction: only a small subset of pre-selected spectral features is exploited, while the bulk of the temperature-relevant information encoded in the full spectrum is systematically discarded. A paradigm shift is presented here, Luminescence Thermometry 2.0 (LT 2.0), implemented through the newly developed SpectraSensML platform, in which machine learning regression operates on the entire emission spectrum to deliver temperature readout. The approach is demonstrated on a Yb3+-doped phosphor emitting in the near-infrared biological transparency window across 125 to 700 K. Nineteen regression algorithms drawn from four families, namely tree ensembles, physics-aware regression models, kernel and instance methods, and neural networks, are systematically benchmarked. A sensor-fusion estimator that combines the first three principal components reaches an root-mean-square error of 0.36 K, a seven-fold improvement over the best luminescence intensity ratio variant. Single-component approaches are shown to be quantitatively sub-optimal: multi-component regressors that exploit the first three principal components reduce the temperature uncertainty by close to an order of magnitude. The structural reason behind the failure of decision-tree ensembles on unseen temperatures is explained: their piecewise-constant predictions cannot interpolate beyond training set-points. The open-source SpectraSensML application used to obtain the results is released alongside the manuscript to enable reproducible community benchmarks.

physics.app-ph↗

Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition

Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser deposition (PLD) technique. The photothermal response of the MoS2 films was measured as changes in the resistance of MoS2 films when irradiated with mid IR (7 to 8.2 μm) source. We show that it is possible to enhance the temperature coefficient of resistance (TCR) of the MoS2 thin film by controlling the interface through proper choice of substrate and growth conditions. The thin films grown by PLD were characterized using XRD, Raman, AFM, XPS and TEM. High-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrate in a layer-by-layer manner with misfit dislocations. Layer growth morphology is disrupted when grown on substrates with diamond cubic structure such as silicon due to growth twin formation. The growth morphology is very different on amorphous substrates such as Si/SiO2 or Si/SiN. The MoS2 film grown on silicon shows a very high TCR (-2.9% K-1), mid IR sensitivity (delR/R=5.2 %) and responsivity (8.7 V/W) as compared to films on other substrates.

cond-mat.mtrl-sci↗