arXiv subjects

A. A. Bykov

Publications and source records attributed to A. A. Bykov.

At least 19 recordsLinked to original sources

arXiv2026

Magnetophonon Resistance Oscillations in Structures with a GaAs Quantum Well and Barriers of AlAs/GaAs$\langleδ$-Si$\rangle$ Superlattices

Magnetophonon resistance oscillations (MPR) associated with the resonant scattering of electrons by optical phonons at temperatures of 77-240 K, as well as resonant scattering of electrons by acoustic phonons (PIRO) at temperatures of 10-25 K, were investigated in the same samples featuring a GaAs quantum well and AlAs/GaAs superlattice barriers doped with Si. The study of MPR demonstrated that resonant electron scattering occurs on bulk longitudinal optical phonons and does not depend on the dimensionality of the system or inter-subband transitions in systems with two subbands of size quantization. However, the amplitude of the oscillation with number $N=1$ in two-dimensional structures depends on the interplay of scattering mechanisms, which, in turn, is influenced by the structure of the system. As for PIRO, in samples with two size quantization subbands, resonant electron scattering by longitudinal acoustic phonons is observed against the background of inter-subband transitions (MISO), leading to their interference.

cond-mat.mes-hall↗

arXiv2024

Optical realization of magneto-intersubband oscillations

We report on the optical realization of the magneto-intersubband oscillations that have been measured in the sub-terahertz transmittance of a GaAs quantum well with two subbands occupied. Following their dc analogue, the oscillations are periodic in the inverse magnetic field with the period governed by the subband gap. Their magnitude and polarization dependence accurately follow the presented simplified version of the dynamic magneto-intersubband oscillations equation that naturally combines dc magneto-intersabband oscillations with microwave-induced resistance oscillations (MIRO). Simultaneously measured photoresistance also reveals its strong sensitivity to the sign of the circular polarization, proving the used theoretical modeling.

cond-mat.mes-hall↗

arXiv2023

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.

cond-mat.mes-hall↗

arXiv2021

Temperature Damping of Magneto-Intersubband Resistance Oscillations in Magnetically Entangled Subbands

Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature damping factor: $A_{MISO}(T)=X/\sinh(X)$, where $X=2π^2kTδf$ and $δf$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed.

cond-mat.mes-hall↗

arXiv2021

Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots

The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated antidot lattice are observed only for the first subband. It is found that microwave irradiation under the cyclotron resonance condition results in the formation of resistance oscillations periodic in the inverse magnetic field in the region of the main commensurability peak. It is established that the period of these oscillations corresponds to the period of magneto-intersubband oscillations. The observed effect is explained by the increase in the rate of intersubband scattering caused by the difference between the electron heating in the subbands E1 and E2.

cond-mat.mes-hall↗

arXiv2021

Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers

The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in τt and τq with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in τt/τq observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in τt more considerably than an increase in τq.

cond-mat.mes-hall↗

arXiv2020

Nonlinear AC and DC Conductivities in a Two-Subband n-GaAs/AlAs Heterostructure

The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$.

cond-mat.mes-hall↗

arXiv2020

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.

cond-mat.mes-hall↗

arXiv2019

AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

The direct-current (dc) $σ_{xx}^{dc}$ and alternating-current (ac) $σ_{xx}^{ac}=σ_1-iσ_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $σ_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the $σ_1 / σ_2$ ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.

cond-mat.mes-hall↗

arXiv2019

Analog of the Intertype Superconductivity in Nanostructured Materials

Magnetization hysteresis loops of tin samples with an inverted opal structure are presented. The sample formed by tin particles with the size of 70 and 128 nm is found to be a type-I superconductor. The tin sample formed by 80 and 42 nm particles demonstrates an analog of intertype superconductivity: features of both type-I and II superconductors are observed on the magnetization isothermal curves. Behaviors of the irreversible and reversible magnetization support coexistence of type-I and II superconducting nanoparticles in this sample.

cond-mat.supr-con↗

arXiv2017

Microwave-induced zero-resistance states in a high-mobility two-subband electron system

In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. MIRO in the studied two-subband system appear in lower magnetic fields comparing to MISO. This is an indication of some unknown mechanism that exists in the two-subband system and is responsible for MISO amplitude damping in low magnetic fields, while it does not affect the MIRO amplitude. Zero resistance states (ZRS) appear in the system under study under microwave irradiation in the narrow range of magnetic fields near the MISO maximum.

cond-mat.mes-hall↗

arXiv2016

Positive Quantum Magnetoresistance in Tilted Magnetic Field

Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de Haas resistance oscillations due to modification of the electron spectrum via enhanced Zeeman splitting. Surprisingly no quantization of the spectrum is detected when the Zeeman energy exceeds the half of the cyclotron energy suggesting an abrupt transformation of the electron dynamics. Observed angular evolution of QPMR implies strong mixing between spin subbands. Theoretical estimations indicate that in the presence of spin-orbital interaction the elastic impurity scattering provides significant contribution to the spin mixing in GaAs quantum wells at high filling factors.

cond-mat.mes-hall↗

arXiv2016

Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields

Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of electron density of states. Magnetic field tilt inverts these oscillations. Surprisingly the strongest inverted oscillations are observed at a tilt corresponding to nearly absent modulation of the electron density of states in regime of magnetic breakdown of semiclassical electron orbits. This phenomenon establishes an example of quantum resistance oscillations due to Landau quantization, which occur in electron systems with a constant density of states.

cond-mat.mes-hall↗

arXiv2016

Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field

The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the $i^{th}$ and $j^{th}$ subbands are observed and obey the relation $Δ_{ij}=E_j-E_i=k\cdot\hbarω_c$, where $ω_c$ is the cyclotron frequency and $k$ is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At $\hbarω_c \ll Δ_{12}$ the in-plane magnetic field increases considerably the gap $Δ_{12}$, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields $\hbarω_c \gg Δ_{12}$ relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At $\hbarω_c \approx Δ_{12}$ the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number $k$ terminate, while MISO corresponding to even $k$ evolve $continuously$ into the high field regime corresponding to $\hbarω_c \gg Δ_{12}$

cond-mat.mes-hall↗

arXiv2014

Dynamics of Quantal Heating in Electron Systems with Discrete Spectra

The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity oscillating at the beat frequency $f=f_1-f_2$ between two microwaves applied to 2D system at frequencies $f_1$ and $f_2$. The method provides $direct$ access to the dynamical characteristics of the heating and yields the inelastic scattering time $τ_{in}$ of 2D electrons. The obtained $τ_{in}$ is strongly temperature dependent, varying from 0.13 ns at 5.5K to 1 ns at 2.4K in magnetic field $B$=0.333T. When temperature $T$ exceeds the Landau level separation the relaxation rate $1/τ_{in}$ is proportional to $T^2$, indicating the electron-electron interaction as the dominant mechanism limiting the quantal heating. At lower temperatures the rate tends to be proportional to $T^3$, indicating considerable contribution from electron-phonon scattering.

cond-mat.mes-hall↗

arXiv2012

Quantum oscillations of dissipative resistance in crossed electric and magnetic fields

Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the current-induced oscillations does not depend on the magnetic field and temperature. At a fixed current the oscillations are periodic in inverse magnetic fields with a period that does not depend on dc bias. The proposed model considers spatial variations of electron filling factor, which are induced by the electric current, as the origin of the resistance oscillations.

cond-mat.mes-hall↗

arXiv2012

Inter-subband resistance oscillations in crossed electric and magnetic fields

Quantum oscillations of nonlinear resistance are investigated in response to electric current and magnetic field applied perpendicular to single GaAs quantum wells with two populated subbands. At small magnetic fields current-induced oscillations appear as Landau-Zener transitions between Landau levels inside the lowest subband. Period of these oscillations is proportional to the magnetic field. At high magnetic fields different kind of quantum oscillations emerges with a period,which is independent of the magnetic field. At a fixed current the oscillations are periodic in inverse magnetic field with a period that is independent of the dc bias. The proposed model considers these oscillations as a result of spatial variations of the energy separation between two subbands induced by the electric current.

cond-mat.mes-hall↗

arXiv2012

Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field

Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3 in the pulse magnetic field H = 25 T was measured at different temperatures. Magnetoresistance relaxation with a characteristic time of 10 -3 s was found. It has been established that the temperature dependence of the relaxation parameter τ(t) at different temperatures correlates with the temperature dependence of electrical resistance R(T). The proposed relaxation mechanism is related to relaxation of conducting and dielectric phases in the sample volume under phase stratification conditions. It is shown that relaxation parameter τ reflects the number of boundaries in the volume and not the ratio between phase fractions.

cond-mat.mtrl-sci↗